The South Korean giant Samsung has announced its new technology called eXtended-Cube (X-Cube), today. It is a silicon-proven 3D IC (Integrated Circuit) technology that facilitates 3D SRAM-logic silicon at 7-nanometers and above. Additionally, it will fulfill the demands of next-gen applications like artificial intelligence, 5G, new mobile and wearable technologies, and high-performance computing for consumers.
In response to the product, the Senior Vice President of Foundry Market Strategy at Samsung Electronics Mr. Moonsoo Kang said, “Samsung’s new 3D integration technology ensures reliable TSV interconnections even at the cutting-edge EUV process nodes. We are committed to bringing more 3D IC innovation that can push the boundaries of semiconductors.”
Moreover, the X-Cube test chip built on 7nm uses TSV technology to pile SRAM on top of a logic die, which results in freeing up space to store more memory into a smaller footprint. Also, the ultra-thin package design comes with significantly shorter signal paths between the dies for maximized data transfer speed and energy efficiency, due to the 3D integration.
As for the availability, the X-Cube’s silicon-proven design methodology and flow are feasible now for progressive nodes, including 5nm and 7nm. Further details regarding this technology will be presented at Hot Chips, an annual conference on high-performance computing. It will be live-streamed Aug 16-18.